Modeling the Geometry-Dependent Parasitics in Multi-Fin FinFETs
نویسندگان
چکیده
This paper studies the geometry-dependent parasitic components in multi-fin FinFETs. Compared with conventional planar MOSFETs, the gate resistance has a stronger dependence on device geometry. Parasitic fringing capacitance and overlap capacitance are physically modeled as functions of gate geometry parameters using a conformal mapping method. Also, a physical model is presented to account for the gate resistance and parasitic capacitive couplings between Source/Drain (S/D) fins and gates.
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